NTGS3455T1 MOSFET −3.5 Amps, −30 Volts
P−Channel TSOP−6
Features
• • • •
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available
http://onsemi.com
V(BR)DSS −30 V RDS(on) TYP 100 mW @ −10 V ID Max −3.5 A
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol VDSS VGS Drain−to−Source.
Power MOSFET
NTGS3455T1 MOSFET −3.5 Amps, −30 Volts
P−Channel TSOP−6
Features
• • • •
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available
http://onsemi.com
V(BR)DSS −30 V RDS(on) TYP 100 mW @ −10 V ID Max −3.5 A
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol VDSS VGS Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance Junction−to−Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 µS) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction−to−Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 µS) Maximum Operating Power Dissipation Maximum Operating Drain Current
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds
1. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t t 5.0 seconds. 2. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state.
m o .c U 4 t e e h S a t a .D w w w
P−Channel 1 2 5 6 DRAIN Value −30 Unit Volts Volts "20.0 62.5 2.0 −3.5 3 GATE RθJA Pd ID IDM Pd ID °C/W Watts Amps Amps Watts Amps °C/W Watts 4.