NTGS3446

NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb−Free Package is Available http://onsemi.com V(BR)DSS 20 V RDS(on) TYP ID MAX 5.1 A 36 mW @ 4.5 V Applications Power Management in portable and battery−powered products, i.e. computers, printers, PCMCIA cards, cellular and cordless Lithium Ion Battery Applications Notebook PC MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp t 10 ms) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp t 10 ms) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp t 10 ms) Source Current (Body Diode) Symbol VDSS VGS RqJA Pd Value 20 ±12 Unit V V Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 seconds w w .D w t a IDM ID RqJA Pd ID IDM RqJA Pd ID IDM IS TL S a 244 0.5 2.5 10 128 1.0 3.6 14 62.5 2.0 5.1 20 5.1 − 55 to 150 260 °C/W W A A e h A A t e U 4 Gate 3 1 446 W ...