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NTGS3441T1

ON Semiconductor

Power MOSFET

NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 Features http://onsemi.com • • • • Ultra Low RDS(on) Higher E...


ON Semiconductor

NTGS3441T1

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NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 Features http://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Symbol VDSS VGS RqJA Pd ID IDM RqJA Pd ID IDM RqJA Pd ID IDM Value −20 "8.0 244 0.5 −1.65 −10 128 1.0 −2.35 −14 62.5 2.0 −3.3 −20 −55 to 150 260 Unit V V Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds 1. Minimum FR−4 or G−10PCB, operating to steady state. 2. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), operating to steady state. 3. Mounted onto a 2″ square FR−4 board (1″ sq. 2 oz. cu. 0.06″ thick single sided), t t 5.0...




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