NTF3N08

( DataSheet : www.DataSheet4U.com ) NTF3N08, NTF3N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive system applications. Typical applications include integrated starter alternator, electronic power steering, electronic fuel injection, catalytic converter heaters and other high power applications made possible via an automotive 42 V bus. ON Semiconductor’s latest technology offering continues to offer high avalanche energy capability and low reverse recovery losses. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 80 Vdc, VGS = 0 Vdc) (VDS = 80 Vdc, VGS = 0 Vdc, TJ =150°C) Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) NTF3N08 NTF3N08L Static Drain–to–Source On–Resistance (ID = 1.5 Adc) NTF3N08, VGS= 10 V NTF3N08L, VGS = 5 V VGS(th) 2.0 1.0 RDS(on) 3.0 1.5 4.0 2.0 mΩ Vdc V(BR)DSS 80 IDSS – – IGSS – – – – 1.0 10 nAdc ±100 – – µAdc Vdc Symbol Min Typ Max Unit http://onsemi.com 3 AMPERES 3N08 Typ RDS(on) = 140 mΩ 3N08L Typ RDS(on) = 155 mΩ SOT–223 CASE 318E STYLE 3 – – 140 155 – – This document contains information o...