NTF3055L108, NVF3055L108
MOSFET – Power, N-Channel, Logic Level, SOT-223
3.0 A, 60 V
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies • Converters • Power Motor Controls • Bridg.
Power MOSFET
NTF3055L108, NVF3055L108
MOSFET – Power, N-Channel, Logic Level, SOT-223
3.0 A, 60 V
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies • Converters • Power Motor Controls • Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms)
VGS ± 15 ± 20
Drain Current − Continuous @ TA = 25°C (Note 1) − Continuous @ TA = 100°C (Note 2) − Single Pulse (tp ≤ 10 ms)
ID 3.0 ID 1.4 IDM 9.0
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD 2.1 1.3
0.014
Unit Vdc Vdc
Vdc Vpk Adc
Apk
Watts Watts W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55 to 175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
EAS
74 mJ
Thermal Resistance −Junction−to−Ambient (Note 1) −Junction−to−Ambient (Note 2)
RqJA RqJA
°C/W 72.3
114
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Stresses exceeding tho.