NTE6664

NTE6664 Integrated Circuit 64K–Bit Dynamic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability. By multiplying row– and column– address inputs, the NTE6664 requires only eight address lines and permits packaging in a standard 16–Lead DIP package. Complete address decoding is done on chip with address latches incorporated. Data out is controlled by CAS allowing for greater system flexibility. All inputs and outputs, including clocks, are fully TTL compatible. The NTE6664 incorporates a one– transistor cell design and dynamic storage techniques. In addition to the RAS–only refresh mode, the refresh control function available on Pin1 provides two additional modes of refresh, automatic and self refresh. Features: D Single +5V Operation (±10%) D Maximum Access Time: 150ns D Low Power Dissipation: 302.5mW Max (Active) 22mW Max (Standby) D Three State Data Output D Early–Write Common I/O Capability D D D D D D 128 Cycle, 2ms Refresh Control on Pin1 for Automatic or Self Refresh RAS–Only Refresh Mode CAS Controlled Output Fast Page Mode Cycle Time Low Soft Error Rate: < 0.1% per 1000 Hrs Absolute Maximum Ratings: (Note 1) Voltage on VCC Supply Relative to VSS, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –2 to +7...