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NTE6407 Datasheet

Part Number NTE6407
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bilateral Trigger Diodes (DIACS)
Datasheet NTE6407 DatasheetNTE6407 Datasheet (PDF)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum.

  NTE6407   NTE6407






Part Number NTE6409
Manufacturers NTE Electronics
Logo NTE Electronics
Description Unijunction Transistor
Datasheet NTE6407 DatasheetNTE6409 Datasheet (PDF)

NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW RMS .

  NTE6407   NTE6407







Part Number NTE6408
Manufacturers NTE Electronics
Logo NTE Electronics
Description Bilateral Trigger Diodes (DIACS)
Datasheet NTE6407 DatasheetNTE6408 Datasheet (PDF)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum.

  NTE6407   NTE6407







Part Number NTE6404
Manufacturers NTE Electronics
Logo NTE Electronics
Description Silicon Unilateral Switch (SUS)
Datasheet NTE6407 DatasheetNTE6404 Datasheet (PDF)

NTE6404 Silicon Unilateral Switch (SUS) Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower values and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterize.

  NTE6407   NTE6407







Part Number NTE6403
Manufacturers NTE Electronics
Logo NTE Electronics
Description Integrated Circuit Silicon Bilateral Switch (SBS)
Datasheet NTE6407 DatasheetNTE6403 Datasheet (PDF)

NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS) Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and characterized for appli.

  NTE6407   NTE6407







Bilateral Trigger Diodes (DIACS)

NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: D Glass–Chip Passivation D DO35 Type Trigger Package D Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1µF Device Dissipation (TA = –40° to +40°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above +40°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/°C Operating Junction Temperature Range, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278°C/W Thermal Resistance, Junction–to–Lead (Note 1), RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W Lead Temperature (During Soldering, 1/16” (1.59mm) from case, 10sec max), TL . . . . . . . . +23.


2005-05-12 : NTE5586    NTE5587    NTE5588    NTE5589    NTE5590    NTE5591    NTE5592    NTE5593    NTE5597    NTE56   


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