NTE584

NTE584 Silicon Schottky Diode Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Maximum Lead Temperature (During Soldering, 10s at 4mm from Case), TL . . . . . . . . . . . . +230°C Thermal Resistance, Junction–to–Ambient (Note 1), RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Note 1. On infinite heat sink with 4mm lead length. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Static Characteristic Breakdown Voltage Forward Voltage Continuous Reverse Current Dynamic Characteristic Overvoltage Coefficient Minority Carrier Life Time C τ VR = 0V, f = 1MHz IF = 5mA, Krakau...