NTE578

NTE578 Silicon Rectifier Schottky Barrier, General Purpose Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. Features: D Low Reverse Current D Low Stored Charge, Majority Carrier Conduction D Low Power Loss/High Efficiency D Highly Stable Oxide Passivated Junction D Guard–Ring for Stress Protection D Low Forward Voltage D 150°C Operating Junction Temperature D High Surge Capacity Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V DC Blocking Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Average Rectified Forward Current, IO (VR (equiv) ≤ 0.2VR(dc), RθJA = 50°C/W, P.C. Board Mounting, TA = +120°C) . . . . . . . . . 1A Nonrepetitive Peak Surge Current, IFSM (Surge applied at rated load conditions, half–wave single phase, 60Hz) . . . . . . . . . . . . . 25A Operating Junction Temperature Range, TJ . . . . . . . . . . . . ....