NTE490 MOSFET N–Ch, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . ...
NTE490
MOSFET N–Ch, Enhancement Mode High Speed Switch
Absolute Maximum Ratings: Drain–Source
Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate–Source
Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Drain–Source Breakdown
Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold
Voltage Static Drain–Source ON Resistance Drain Cutoff Current Forward Transconductance Small–Signal Characteristics Input Capacitance Switching Characteristics Turn–On Time Turn–Off Time ton toff ID = 200mA ID = 200mA – – 4 4 10 10 ns ns Ciss VDS = 10V, VGS = 0, f = 1MHz – – 60 pF VGS(Th) rDS(on) ID(off) gfs V...