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NTE488 Datasheet

Part Number NTE488
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE488 DatasheetNTE488 Datasheet (PDF)

NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: .

  NTE488   NTE488






Part Number NTE489
Manufacturers NTE
Logo NTE
Description Silicon P-Channel JFET Transistor
Datasheet NTE488 DatasheetNTE489 Datasheet (PDF)

NTE489 Silicon P–Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE488   NTE488







Part Number NTE4868
Manufacturers NTE
Logo NTE
Description Transient Overvoltage Suppressor
Datasheet NTE488 DatasheetNTE4868 Datasheet (PDF)

NTE4828 thru NTE4868 Surge Clamping, Transient Overvoltage Suppressor Unidirectional Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching power supplies and may be used to replace crowbar circuits. They are able to withstand high levels of peak current while a.

  NTE488   NTE488







Part Number NTE486
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE488 DatasheetNTE486 Datasheet (PDF)

NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: D Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency = 50% D S Parameter Data from 100MHz to 1GHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE488   NTE488







Part Number NTE484
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet NTE488 DatasheetNTE484 Datasheet (PDF)

NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features: D Designed for 800 MHz Mobile Communications Equipment D 25W Min., with Greater than 5dB Gain at 836MHz D Withstands Infinite VSWR .

  NTE488   NTE488







Silicon NPN Transistor

NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . ..


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