NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz
Description: The NTE484 is a 12.5 Volt e...
NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz
Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features: D Designed for 800 MHz Mobile Communications Equipment D 25W Min., with Greater than 5dB Gain at 836MHz D Withstands Infinite VSWR at Rated Operating Conditions D Internal Input matched “Tuned Q” D Common Base Configuration Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base
Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter
Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter–Base
Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...