NTE477 Silicon NPN Transistor RF Power Output
Description: The NTE477 is a silicon NPN epitaxial planar type transistor ...
NTE477 Silicon NPN Transistor RF Power Output
Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power
amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25°C Applications: 30 to 35 watts output power
amplifiers in VHF band mobile radio applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base
Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base
Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector–Emitter
Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . ....
