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NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor (MOSFET)
Description: The NTE455 is ...
www.DataSheet4U.com
NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor (
MOSFET)
Description: The NTE455 is an N−Channel silicon dual−gate
MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Features: D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source
Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate1−Source
Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V Gate2−Source
Voltage, VG2S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C Electrical ...
