NTE343

NTE343 Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz) Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz Application: D 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A Collector Dissipation, PC TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Operating Junction Temperature, TJ . . . . . . . . . . . . ....