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NTE3321
Insulated Gate Bipolar Transistor
Description
NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation
Voltage
D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter
Voltage
, VCES . . . . . . . . . . . . . . . . . . . . . . . . ...
NTE
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