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NTE3300

NTE

Insulated Gate Bipolar Transistor


Description
NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . ...



NTE

NTE3300

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