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NTE3122 Datasheet

Part Number NTE3122
Manufacturers NTE
Logo NTE
Description Phototransistor
Datasheet NTE3122 DatasheetNTE3122 Datasheet (PDF)

NTE3122 Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Narrow Acceptance: ∆q = ±13° Typ D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 D Visible Light Cut–Off Applications: D VCRs, Cassette Tape Recorders D Floppy Disk Drives D Optoelectronic Switches D Automatic Stroboscopes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE3122   NTE3122






Part Number NTE3123
Manufacturers NTE
Logo NTE
Description Phototransistor
Datasheet NTE3122 DatasheetNTE3123 Datasheet (PDF)

NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: ∆q = ±40° Typ D Visible Light Cut–Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Collector Voltage, VECO . . . . . . ..

  NTE3122   NTE3122







Part Number NTE3120
Manufacturers NTE
Logo NTE
Description Silicon NPN Phototransistor Detector
Datasheet NTE3122 DatasheetNTE3120 Datasheet (PDF)

NTE3120 Silicon NPN Phototransistor Detector Features: D High Sensitivity D GaAs LED–Wide Spectral Range, with GaAs LED. D Low Dark Current D Side–View Plastic Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE3122   NTE3122







Part Number NTE312
Manufacturers NTE
Logo NTE
Description N-Channel Silicon Junction Field Effect Transistor
Datasheet NTE3122 DatasheetNTE312 Datasheet (PDF)

NTE312 N–Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross–Modulation Minimized by Square–Law Transfer Characteris.

  NTE3122   NTE3122







Phototransistor

NTE3122 Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Narrow Acceptance: ∆q = ±13° Typ D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm2 D Visible Light Cut–Off Applications: D VCRs, Cassette Tape Recorders D Floppy Disk Drives D Optoelectronic Switches D Automatic Stroboscopes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Disspation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Lead Temperature, TL During Soldering, 1.4mm from bottom face of resin package, 5sec . . . . . . . . . . . . . . . +260°C Electrical Characteristics: Parameter Collector Current Collector Dark Current Symbol IC ICBO Test Conditions VCE = 2V, Ee =.


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