Part Number | NTE312 |
Manufacturer | NTE |
Description | N-Channel Silicon Junction Field Effect Transistor |
Features | D High Power Gain: 10dB Min at 400MHz D High Transconductance: 4000 µmho Min at 400MHz D Low Crss: 1pF Max D High (Yfs)... |
Published | May 9, 2005 |
Datasheet | NTE312 PDF File |