NTE3096

NTE3096 Optoisolator Low LED Drive NPN Transistor Output Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as interfacing and coupling systems, phase feedback controls, solid–state relays and general purpose switching circuits. Features: D High Transfer Ratio with Low LED Drive D High Electrical Isolation D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Infrared Emitting Diode Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1µsec, 2% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C Phototransistor Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...