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NTE3084 Datasheet

Part Number NTE3084
Manufacturers NTE
Logo NTE
Description Optoisolater
Datasheet NTE3084 DatasheetNTE3084 Datasheet (PDF)

NTE3084 Optoisolater NPN Photo Darlington Output Features: D High Isolation Voltage–7500V Electrical Characteristics: (TA = +25°C unless otherwise specified) Minimum Current Transfer Ratio (IF = 10mA, VCE = 5V), CTR . . . . . . . . . . . . . . . . . . . . . . . . . 100% Minimum Isolation Voltage (Input–to–Output, Note 1) VISO . . . . . . . . . . . . . . . . . . . . . . 7500V (Peak) Maximum Saturation Voltage (IF = 50mA, IC = 50mA), VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0.

  NTE3084   NTE3084






Part Number NTE3089
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3084 DatasheetNTE3089 Datasheet (PDF)

NTE3089 Optoisolator AC Input, Silicon NPN Phototransistor Output Description: The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with a silicon phototransistor in a 6–Lead DIP type package. Features: D AC or Polarity Insensitive Inputs D Fast Switching Speeds D Built–In Reverse Polarity Input Protection D High Isolation Voltage D High Isolation Resistance D I/O Compatible with Integrated Circuits Absolute Maximum Ratings: (TA = +25°C, unless otherwise sp.

  NTE3084   NTE3084







Part Number NTE3088
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3084 DatasheetNTE3088 Datasheet (PDF)

NTE3088 Optoisolator Silicon NPN High Voltage Phototransistor Output Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6–Lead DIP type package designed for applications requiring high voltage output. This device is particularly useful in copy machines and solid state relays. Features: D High Voltage: 300V D High Isolation Voltage: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Input LED Cont.

  NTE3084   NTE3084







Part Number NTE3087
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3084 DatasheetNTE3087 Datasheet (PDF)

NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor capable of sinking 50mA. The open collector output provides capability for bussing, ORing and strobing. The NTE3087 is packaged in a plastic 8–pin mini–DIP. Features: D LSTTL/TTL Compatible: 5V Sup.

  NTE3084   NTE3084







Part Number NTE3086
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3084 DatasheetNTE3086 Datasheet (PDF)

NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: D Two isolated Channels per Package D 7500V Withstand Test Voltage D CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (TA = .

  NTE3084   NTE3084







Part Number NTE3085
Manufacturers NTE
Logo NTE
Description Optoisolator
Datasheet NTE3084 DatasheetNTE3085 Datasheet (PDF)

NTE3085 Optoisolator Photon Coupled Bilateral Analog FET Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals. Features: As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance As An A.

  NTE3084   NTE3084







Optoisolater

NTE3084 Optoisolater NPN Photo Darlington Output Features: D High Isolation Voltage–7500V Electrical Characteristics: (TA = +25°C unless otherwise specified) Minimum Current Transfer Ratio (IF = 10mA, VCE = 5V), CTR . . . . . . . . . . . . . . . . . . . . . . . . . 100% Minimum Isolation Voltage (Input–to–Output, Note 1) VISO . . . . . . . . . . . . . . . . . . . . . . 7500V (Peak) Maximum Saturation Voltage (IF = 50mA, IC = 50mA), VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V Maximum Collector Dark Current (IF = 0, VCE = 10V), ICEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100nA Minimum Collector–Emitter Breakdown Voltage (IF = 0, IC = 0.1mA), V(BR)CEO . . . . . . . . . . . . . 55V Maximum LED Forward Voltage (IF = 20mA), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V Note 1. Isolation Surge Voltage (VISO), is an internal device dielectric breakdown rating. For this test LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6 are common. 6 5 4 .260 (6.6) Max Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter 1 2 3 .070 (1.78) Max .350 (8.89) Max .300 (7.62) .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54) .


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