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NTE29 Datasheet

Part Number NTE29
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE29 DatasheetNTE29 Datasheet (PDF)

NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector–Emitter Voltage, VC.

  NTE29   NTE29






Part Number NTE2V010
Manufacturers NTE
Logo NTE
Description Metal Oxide Varistors
Datasheet NTE29 DatasheetNTE2V010 Datasheet (PDF)

NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors (MOV) Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents. The NTE 1V Series Varistors have a non–linear voltage/current characteristic as expressed b.

  NTE29   NTE29







Part Number NTE2999
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE29 DatasheetNTE2999 Datasheet (PDF)

NTE2999 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D Avalanche−Proof Applications: D Switching Regulators D UPS (Uninterruptible Power Supply) D DC−DC Converters D G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE29   NTE29







Part Number NTE2998
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE29 DatasheetNTE2998 Datasheet (PDF)

NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . .

  NTE29   NTE29







Part Number NTE2997
Manufacturers NTE
Logo NTE
Description P-Channel MOSFET
Datasheet NTE29 DatasheetNTE2997 Datasheet (PDF)

NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Gate−Source Voltage,.

  NTE29   NTE29







Part Number NTE2996
Manufacturers NTE Electronics
Logo NTE Electronics
Description N-Channel MOSFET
Datasheet NTE29 DatasheetNTE2996 Datasheet (PDF)

NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated D G Absolute Maximum Ratings: S Drain CCPuuorlnrsTTeteiCCnndtu==,(oIN++Duo21st50e(50VC25GC)(SN..=o.. ..t1e..0..1V..)).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

  NTE29   NTE29







Silicon Complementary Transistors

NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/°C Operating Junction Temperat.


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