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NTE2732A

NTE

Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM

NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet er...


NTE

NTE2732A

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Description
NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is ideal for use with high performance +5V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125mA while the maximum standby mode is achieved by applying a TTL–high signal to the CE input. Features: D Fast Access Time: 200ns Max D 0° to +70°C Standard Temperature Range D Single +5V Power Supply D Low Standby Current (35mA Max) D Inputs and Outputs TTL Compatible During Read and Program D Completely Static Absolute Maximum Ratings: (Note 1) All Input or Output Voltages with respect to GND, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to –0.6V Supply Voltage with respect to GND during Program, Vpp . . . . . . . . . . . . . . . . . . . . . . . +22 to –0.6V Ambient Temperature under Bias, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10° to +80°C Stora...




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