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NTE2708

NTE

Integrated Circuit NMOS / 8K UV EPROM / 450ns


Description
NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon– gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs...



NTE

NTE2708

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