NTE195A

NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter OFF Char...