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NTE191

Part Number	NTE191
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Datasheet	NTE191 PDF File

Features

 D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Colle...

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