DatasheetsPDF.com

NTE10

Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier

Description

NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

NTE

Download NTE10 Datasheet

Similar Datasheet

NTE1V300 Metal Oxide Varistors (MOV) - NTE
NTE1V010 Metal Oxide Varistors (MOV) - NTE
NTE199 Silicon NPN Transistor Low Noise / High Gain Amplifier - NTE
NTE198 Silicon NPN Transistor - NTE
NTE1979 Integrated Circuit Negative 3 Terminal Voltage Regulator / -8V / 100mA - NTE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)