NTD80N02T4

NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 24 V RDS(on) TYP 5.0 mW ID MAX 80 A Pb−Free Packages are Available Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits G Unit Vdc Vdc Adc 4 Watts °C mJ 1 2 3 N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TC = 25°C Drain Current − Single Pulse (tp = 10 ms) Total Power Dissipation @ TC = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 24 Vdc, VGS = 10 Vdc, IL = 17 Apk, L = 5.0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS Value 24 ±20 80* 200 75 −55 to 150 733 S 4 4 1 2 3 12 3 °C/W RθJC RθJA RθJA TL 1.65 67 120 260 °C CASE 369C CASE 369D CASE 369AA DPAK DPAK DPAK (Surface Mount) (Surface Mount) (Straight Lead) STYLE 2 STYLE 2 STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 80 N02 3 Source 1 Gate 2 Drain 3 Source = Year = Work Week = Device Code Publication Order Number: NTD80N02/D 4 Drain Maximum ratings are those values beyond which dev...