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NTD4904N Power MOSFET
Features
30 V, 79 A, Single N−Channel, DPAK/IPAK
• • • •
Low RDS(on) to Mini...
www.DataSheet4U.com
NTD4904N Power
MOSFET
Features
30 V, 79 A, Single N−Channel, DPAK/IPAK
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
http://onsemi.com
V(BR)DSS 30 V RDS(on) MAX 3.7 mW @ 10 V 5.5 mW @ 4.5 V D ID MAX 79 A
Applications
CPU Power Delivery DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source
Voltage Gate−to−Source
Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TA = 25°C TA = 100°C TA = 25°C TA = 25°C Steady State TA = 100°C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 "20 17.8 12.6 2.6 13 9.2 1.4 79 56 52 316 90 − 55 to 175 47 6.0 68.4 W A A °C A V/ns mJ W A W A Unit V V A
G S 4 4 1 2
N−Channel
4
3
1
CASE 369AA DPAK (Bent Lead) STYLE 2
2 3 CASE 369AD CASE 369D IPAK IPAK (Straight Lead) (Straight Lead DPAK)
2 3
1
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain YWW 49 04NG 4 Drain YWW 49 04NG
4 Drain
Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 5...