NTD4302
MOSFET – Power, N-Channel, DPAK/IPAK
68 A, 30 V
Features
• Ultra Low RDS(on) • Higher Efficiency Extending Bat...
NTD4302
MOSFET – Power, N-Channel, DPAK/IPAK
68 A, 30 V
Features
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature DPAK Mounting Information Provided These Devices are Pb−Free and are RoHS Compliant
Applications
DC−DC Converters Low
Voltage Motor Control Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source
Voltage
Gate−to−Source
Voltage − Continuous
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Continuous
Drain Drain
Current Current
@ @
TTCC
= =
25°C (Note 100°C
4)
Thermal Resistance − Junction−to−Ambient
(Note 2)
Total Power Continuous
DDriassinipCautiorrnen@t @TAT=A
25°C = 25°C
CPuolnsteinduDourasinDCrauinrreCnutr(rNenotte@3)TA = 100°C
VDSS VGS RPIIqDDDJC
RIPDIIqDDDMJA
30 Vdc ±20 Vdc 1.65 °C/W 75 W 68 A 43 A
67 °C/W 1.87 W 11.3 A 7.1 A 36 A
Thermal Resistance − Junction−to−Ambient
(Note 1)
TCPCouootlnnasttleiinnPduuoDoowuureassrinDDDCrriaasusiinnrirpeCCanuutitorr(rrnNeenn@ottte@@T3A)TT=AA
25°C = 25°C = 100°C
RIPDIIqDDDMJA
120 °C/W 1.04 W 8.4 A 5.3 A 28 A
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy − Start...
