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NTD30N02

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Power MOSFET

NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in po...


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NTD30N02

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NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com Power Supplies Converters Power Motor Controls Bridge Circuits 30 AMPERES 24 VOLTS RDS(on) = 11.2 mW (Typ.) N−Channel D Value 24 "20 30 100 75 −55 to 150 50 Unit Vdc Vdc Adc ID IDM PD TJ, Tstg EAS Apk W °C mJ 1 2 3 °C/W RθJC RθJA RθJA TL 1.65 67 120 260 °C D30N02 Y WW DPAK CASE 369C (Surface Mount) Style 2 4 S G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 24 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 10 A, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS MARKING DIAGRAM 4 Drain YWW D30 N02 2 1 Drain 3 Gate Source = Device Code = Year = Work Week Shipping† 75 Units/Rail 2500 Tape & Reel DPAK DPAK Publication Order Number: NTD30N02/D 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in...




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