NTD2955

NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK -60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. Features Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current Dr− Continuous @ Ta = 25°C Dr− Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ Ta = 25°C Operating and Storage Temperature Range VDSS VGS VGSM −60 ± 20 ± 25 ID IDM PD TJ, Tstg −12 −18 55 −55 to 175 Vdc Vdc Vpk Adc Apk W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − ...