NTD20N03L27

NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode has a ideal fast but soft recovery. Features Ultra−Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many Applications MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25_C − Continuous @ TA = 100_C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25_C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1) Operating and Storage Temperature Range VDSS VDGR VGS VGS 30 30 ±20 ±24 Vdc Vdc Vdc ID IDIDM PD TJ, Tstg 20 16 60 74 0.6 1.75 −55 to 150 Adc Apk W W/°CW °C Single...