NTB60N06

NTP60N06, NTB60N06 Power MOSFET 60 V, 60 A, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com Pb−Free Packages are Available Typical Applications 60 VOLTS, 60 AMPERES RDS(on) = 14 mW N−Channel D Power Supplies Converters Power Motor Controls Bridge Circuits G S Value 60 60 "20 "30 60 42.3 180 150 1.0 2.4 −55 to +175 454 Adc Apk W W/°C W °C mJ 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, L = 0.3 mH IL(pk) = 55 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Unit Vdc Vdc Vdc 4 MARKING DIAGRAMS 4 Drain TO−220 CASE 221A STYLE 5 NTx60N06 AYWW 1 2 3 1 Gate 2 Drain 4 Drain D2PAK CASE 418B STYLE 2 3 Source TJ, Tstg EAS 2 NTx60N06 AYWW °C/W RqJC RqJA TL 1.0 62.5 260 °C 3 2 1 3 Drain Gate Source NTx60N06 x A Y ...