www.DataSheet4U.com
Semiconductor
NT331
NPN silicon transistor
Description
• General small signal amplifier
Features...
www.DataSheet4U.com
Semiconductor
NT331
NPN silicon transistor
Description
General small signal amplifier
Features
Low collector saturation
voltage : VCE(sat)=0.15V(Max.) Extremely small size package: 0.8x0.6x0.4 ㎜ Typ. Complementary pair with NT332
Ordering Information
Type NO. NT331 Marking N□ □:hFE rank Package Code SOT-923
Outline Dimensions
unit : mm
0.27 Max.
0.90~1.10 0.05 Max. 0.75~0.85
0.35 Typ. 0.55~0.65
0.36~0.42
0.36~0.43
0.15 Max.
0.22 Max.
Equivalent Circuit
PIN Connections 1. Base 2. Emitter 3. Collector
KSD-T5G001-000
1
www.DataSheet4U.com
NT331
Absolute Maximum Ratings
Characteristic
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC TJ Tstg
Rating
30 20 5 50 50 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-emitter breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Base-emitter
voltage Transition frequency Collector output capacitance
Ta=25°C
Symbol
BVCEO ICBO IEBO hFE
*
Test Condition
IC=1mA, IB=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=50mA, IB=5mA VCE=6V, IC=2mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
20 120 0.7 200 2 0.1 0.1 400 0.15 0.9 -
Unit
V µA µA V V MHz pF
VCE(sat) VBE fT Cob
* : hFE rank / Y : 120 ~ 240, G : 200 ~ 400
KSD-T5G001-000
2
...