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NST30010MXV6T1G

ON Semiconductor

Dual Matched General Purpose Transistor

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed...


ON Semiconductor

NST30010MXV6T1G

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Description
NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Features  Current Gain Matching to 10%  Base−Emitter Voltage Matched to 2 mV  Drop−In Replacement for Standard Device  AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −30 V Collector −Base Voltage VCBO −30 V Emitter −Base Voltage VEBO −5.0 V Collector Current − Continuous IC −100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com SOT−563 CASE 463A PLASTIC (3) (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAMS UU M G G 1 UU = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NST30010MXV6T1G SOT−563 4,...




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