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NSR0230P2

ON Semiconductor

Schottky Barrier Diode

Schottky Barrier Diode NSR0230P2 These Schottky barrier diodes are designed for high−speed switching applications, circ...


ON Semiconductor

NSR0230P2

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Description
Schottky Barrier Diode NSR0230P2 These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features Extremely Fast Switching Speed Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA Low Reverse Current NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Current DC Forward Current Surge Peak (60 Hz, 1 cycle) VR 30 Vdc IF 200 mA IFSM 1.0 A ESD Rating: Class 3B per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 2.0 mW/°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range RqJA TJ, Tstg 600 −55 to +125 °C/W °C 1. FR−5 Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbo...




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