NP83P06PDG

NP83P06PDG -60V – -83A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1516EJ0100 Rev.1.00 Jun. 10, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A )  Low input capacitance : Ciss = 10100 pF Typ.  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 12 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-25ZP (TO-263) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -60 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) (Tc = 25 °C) ID(DC) 83 Drain Current (pulse) I Notes1 D(pulse) 249 Total Power Dissipation (Tc = 25 °C) PT1 150 Total Power Dissipation (Ta = 25 °C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Tstg -55 to 175 Single Avalanche Current I Notes2 AS 49 Single Avalanche Energy E Notes2 AS 240 Notes 1. PW  10 s , Duty Cycle  1% 2. Starting Tch=25℃ , VDD = -30V , RG = 25  , VGS = -20  0V , L = 100H (Ta=25°C) Unit V V A A W W °C °C A mJ R07DS1516EJ0100 Rev.1.00 Jun.10.2022 Page 1 of 7 NP83P06PDG Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-c) Notes3...