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NP82N055KHE Datasheet

Part Number NP82N055KHE
Manufacturers NEC
Logo NEC
Description (NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING
Datasheet NP82N055KHE DatasheetNP82N055KHE Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS =.

  NP82N055KHE   NP82N055KHE






(NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP. • Built-in gate protection diode 5 NP82N055KHE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 55 ±20 ±82 ±300 1.8 163 175 –55 to +175 72 / 49 / 17 51 / 240 / 289 V V A A W W °C °C A mJ (TO-263) (TO-262) Drain Current (pulse) Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.92 83.3 °C/W °C/W The information in this document is subject to change witho.


2007-09-06 : STN3904    STN3904S    STN3904SF    STN3906    STN3906S    STN3906SF    STN3NE06    STN3NE06L    STN3NF06L    STN3PF06   


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