NP82N055DHE

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055CHE NP82N055DHE NP82N055EHE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) Low Ciss: Ciss = 3500 pF TYP. Built-in gate protection diode 5 NP82N055KHE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 55 ±20 ±82 ±300 1.8 163 175 –55 to +175 72 / 49 / 17 51 / 240 / 289 V V A A W W °C °C A mJ (TO-263) (TO-262) Drain Current (pulse) Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.92 83.3 °C/W °C/W The information in this document is subject to change witho...