MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING ...
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE-E1-AY NP80N03KDE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N03CDE-S12-AZ NP80N03DDE-S12-AY NP80N03MDE-S18-AY NP80N03NDE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
FEATURES
Channel Temperature 175 degree rated
www.DataSheet4U.com
Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
Low input capacitance Ciss = 2600 pF TYP.
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional in...
Similar Datasheet