NP32N055ILE

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP32N055HLE NP32N055ILE PACKAGE TO-251 TO-252 FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) Low Ciss : Ciss = 1300 pF TYP. Built-in gate protection diode (TO-251) DataShee ABSOLUTE MAXIMUM RATINGS (TA = 25°C) DataSheet4U.com Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg 55 ±20 ±32 ±100 1.2 66 28 / 21 / 8 7.8 / 44 / 64 175 –55 to +175 V V A A W W A mJ °C °C (TO-252) Single Avalanche Energy Note2 Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 2.27 125 °C/W °C/W DataSheet4U.com The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with...