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NP110N055PUJ Datasheet

Part Number NP110N055PUJ
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP110N055PUJ DatasheetNP110N055PUJ Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS.

  NP110N055PUJ   NP110N055PUJ






Part Number NP110N055PUK
Manufacturers Renesas
Logo Renesas
Description N-Channel MOSFET
Datasheet NP110N055PUJ DatasheetNP110N055PUK Datasheet (PDF)

NP110N055PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0591EJ0200 Rev.2.00 May 24, 2018 Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP110N055PUK-E1-AY *1 Pur.

  NP110N055PUJ   NP110N055PUJ







Part Number NP110N055PUG
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP110N055PUJ DatasheetNP110N055PUG Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP110N055PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source V.

  NP110N055PUJ   NP110N055PUJ







N-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TC = 25°C) PT1 288 Total Power Dissipation (TA = 25°C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 Repetitive Avalanche Energy Note3 Tstg −55 to +175 EAS 435 IAR 66 EAR 435 V V A A W W °C °C mJ A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W The information in this document i.


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