NLSF308

NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. Features http://onsemi.com High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Function Compatible with Other Standard Logic Families QFN−16 Package Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model; > 2000 V; www.DataSheet4U.com Machine Model; > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates Pb−Free Package is Available* 1 QFN−16 MN SUFFIX CASE 485G MARKING DIAGRAM ÇÇÇ ÇÇÇ ÇÇÇ 16 1 NLSF 308 ALYW G G FUNCTION TABLE Inputs A L L H H B L H L H Output Y L L L H NLSF308 = Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NLSF308MNR2 NLSF308MNR2G Package QFN−16 QFN−16 (Pb−Free) Shipping† 3000 / Tape & ...