NJ903L

F-42 01/99 NJ903L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D G D-S Device in this Databook based on the NJ903L Process. S-D Datasheet IF9030 G Die Size = 0.040" X 0.040" All Bond Pads = 0.004" Sq. Substrate is also Gate. D-S www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Input Capacitance Feedback Capacitance Equivalent Noise Voltage Ciss Crss e ¯N 50 18 0.5 pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 Min – 20 Typ – 25 –5 – 500 500 –3 Max Unit V pA mA V NJ903L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-43 NJ903L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 250 Transconductance in mS 250 VGS = Ø V Drain Current in mA 100 VGS = –0.5 V 150 VGS = –1.0 V 100 VGS = –1.5 V 50 VGS = –2.0 V 0 5 10 1...