NJ72L

F-28 01/99 NJ72L Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ72L Process. Datasheet U310 U311 U350 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Drain Source ON Resistance Input Capacitance Feedback Capacitance gfs rds(on) Ciss Crss 22 40 7 2.5 mS Ω pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 –1 Min – 20 Typ – 25 – 10 – 100 90 – 5.5 Max Unit V pA mA V NJ72L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV ID = 1 mA, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-29 NJ72L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.3 V Gfs as a Function of VGS(OFF) 25 Transconductance in mS 25 VGS = Ø V Drain Current in mA 20 VGS = – 0.5 V 15 VGS = –1.0 V 10 VGS = –1.5 V 5 VGS = –2.0 V ...