F-38
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High In...
F-38
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S-D
G
Devices in this Databook based on the NJ450L Process. Datasheet
2N6550 IF4500 IF4501 IFN860
G
Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate.
S-D
www.DataSheet4U.com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown
Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff
Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise
Voltage gfs Ciss Crss e ¯N 100 35 10 0.9 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.1 –4 Min – 25 Typ – 25 – 50 Max Unit V pA mA V
NJ450L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA
VDS = 15V, VGS = ØV VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
nV/√HZ VDG = 4V, ID = 5 mA
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
F-39
NJ450L Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
VGS(OFF) = Ð2.2 V
Gfs as a Function of VGS(OFF) 150 Transconductance in mS
150 VGS = Ø V Drain Current i...