F-22
01/99
NJ36D Process
Silicon Junction Field-Effect Transistor
¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
S D G
Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substr...
