F-12
01/99
NJ26L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum r...
F-12
01/99
NJ26L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ26L Process. Datasheet
2N5397, 2N5398 J210, J211, J212
www.DataSheet4U.com
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown
Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff
Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise
Voltage gfs Ciss Crss e ¯N 8 5 1.5 2.5 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 2 – 0.5 Min – 25 Typ – 30 – 10 – 100 40 –6 Max Unit V pA mA V
NJ26L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA
VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV
f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
nV/√HZ VDS = 15V, ID = 5 mA
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
F-13
NJ26L Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
VGS(OFF) = Ð2.5 V
Gfs as a Function of VGS(OFF) 10 Transconductance in mS
15 VGS = Ø V Drain Current in mA 12 VGS = – 0.5 V 9 VGS = –1.0 V 6 VGS = –1.5 V 3 VGS ...