NJ1800DL

F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C – 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800DL Process. Datasheet IF1801 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance (Pulsed) Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 350 160 50 0.7 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 50 – 0.1 Min – 15 Typ – 25 – 30 – 100 800 –4 Max Unit V pA mA V NJ1800DL Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = 10V, VGS = ØV ID = 1 mA, VGS = ØV VDS = 10V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDG = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com 01/99 F-47 NJ1800DL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.3 V Gfs as a Function of VGS(OFF) 500 Transconductance in mS 500 VGS = Ø V Drain Current i...